[1]张庆,张小勇,饶沛南,等.基于大功率全SiC器件的变换器研究[J].机车电传动,2018,(06):63-66.[doi:10.13890/j.issn.1000-128x.2018.06.013]
 ZHANG Qing,ZHANG Xiaoyong,RAO Peinan,et al.Research on High-power Full SiC Converter[J].Electric Drive for Locomotives,2018,(06):63-66.[doi:10.13890/j.issn.1000-128x.2018.06.013]
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基于大功率全SiC器件的变换器研究
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机车电传动[ISSN:1000-128X/CN:43-1125/U]

卷:
期数:
2018年06期
页码:
63-66
栏目:
研究开发
出版日期:
2018-11-10

文章信息/Info

Title:
Research on High-power Full SiC Converter
文章编号:
1000-128X(2018)06-0063-04
作者:
张庆张小勇饶沛南施洪亮赵明锐周 帅
(株洲中车时代电气股份有限公司技术中心,湖南 株洲 412001)
Author(s):
ZHANG Qing ZHANG Xiaoyong RAO Peinan SHI Hongliang ZHAO Mingrui ZHOU Shuai
( Technology Center, Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, Hunan 412001, China)
关键词:
SiC器件SiC MOSFET杂散电感桥臂串扰振荡抑制高频化
Keywords:
SiC device SiC-MOSFET stray inductance bridge arm crosstalk oscillation suppression high-frequency
分类号:
U264.3+7;TN304.2+4
DOI:
10.13890/j.issn.1000-128x.2018.06.013
摘要:
为了适应变流器产品高频化、高功率密度的发展趋势,研究了大功率全SiC MOSFET器件在变换器中的应用,讨论了全SiC MOSFET器件在应用中的杂散参数问题和桥臂串扰问题。通过双脉冲试验,重点研究了驱动电阻和吸收装置对大功率全SiC MOSFET器件关断尖峰电压的影响。结合实际产品研究了基于大功率SiC MOSFET器件在轨道交通Boost变换器中的应用。试验表明,相对于硅基 IGBT器件,采用SiC MOSFET器件能给变换器带来轻量化、工作频率、效率的全方位提升。
Abstract:
In order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied. The problem of stray parameters and bridge arms crosstalk in application of all-SiC-MOSFET devices was discussed. The effect of drive resistance and absorber on the closing peak of high-power all-SiC-MOSFET device was studied. The application of high-power SiC-MOSFET device in Boost converter was studied. The experiment showed that compared with the original Si-IGBT, the adoption of SiC-MOSFET device could bring an all-round improvement in light weight, working frequency and efficiency to the converter.

参考文献/References:

[1]赵斌. SiC功率器件特性及其在Buck变换器中的应用研究[D]. 南京:南京航空航天大学,2014. [2]吕蕾蕾. 碳化硅MOSFET模型研究及等效高温开关电源设计[D]. 沈阳:东北大学,2014. [3]范春丽,赵朝会,余成龙,等. 寄生电感对Buck变换器中SiC MOSFET开关特性的影响[J]. 上海电机学院学报,2015,18(2):63-69. [4]周琦. 碳化硅MOSFET驱动技术研究[D]. 济南:山东大学,2016.

备注/Memo

备注/Memo:
作者简介:张 庆(1983-),男,工程师,主要从事DC/DC产品研究开发。
更新日期/Last Update: 2018-11-10